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PC354NT
PC354NT
s Features
1. AC inputs 2. Opaque type, mini-flat package PC354NT ( 1-channel ) 3. Subminiature type ( The volume is smaller than that of our conventional DIP type by as far as 30 %. ) 4. Isolation voltage between input and output PC354NT ***Viso : 3 750V rms
Mini-flat Package, AC Input Type Photocoupler
s Outline Dimensions
2.54 0.25 4 354 1 Primary side mark 2 0.4 0.1 0.1 0.1 2.6 0.2 1 C0.4 Input side 2 5.3 0.3 3 4.4 0.2 Internal connection diagram 4 3
( Unit : mm )
1 Anode/ Cathode 2 Anode/ Cathode 3 Emitter 4 Collector 0.2 0.05 0.5 + 0.4 - 0.2
3.6 0.3
s Applications
1. Hybrid substrates that require high density mounting. 2. Programmable controllers
6
7.0 + 0.2 - 0.7
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. "
PC354NT s Absolute Maximum Ratings
Parameter Forward current Input *1 Peak forward current Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature
*1 Pulse width <=100 s, Duty ratio : 0.001 *2 40 to 60% RH, AC for 1 minute *3 For 10 senconds Classification of current transfer ratio ( CTR )
( Ta = 25C )
Symbol IF I FM P V CEO V ECO IC PC P tot V iso T opr T stg T sol Rating 50 1 70 35 6 50 150 170 3 750 - 30 to + 100 - 40 to + 125 260 Unit mA A mW V V mA mW mW V rms C C C
Soldering area 0.2mm or more
Model No. PC354N1T PC354NT
Rank mark A A or No mark
CTR ( % ) 50 to 150 20 to 400
CE
g Conditions : I F = 1mA, V
= 5V, Ta = 25C
s Electro-optical Characteristics
Input Parameter Forward voltage Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Current transfer ratio Collector-emitter saturation voltage Isolation resistance Floating capacitance Rise time Response time Fall time Symbol VF Ct ICEO BV CEO BV ECO CTR VCE( sat ) R ISO Cf tr tf Conditions IF = 20mA V = 0, f = 1kHz VCE = 20V, I F = 0 IC = 0.1mA, I F = 0 IE = 10 A, I F = 0 IF = 1mA, V CE = 5V IF = 20mA, I C = 1mA DC500V, 40 to 60% RH V = 0, f = 1MHz VCE = 2V, I C = 2mA RL = 100 MIN. 35 6 20 5 x 1010 TYP. 1.2 30 0.1 1011 0.6 4 3
( Ta = 25C )
MAX. 1.4 250 10 - 7 400 0.2 1.0 18 18 Unit V pF A V V % V pF s s
Output
Transfercharacteristics
PC354NT
Fig. 1 Forward Current vs. Ambient Temperature
70 60 ( mA ) 50 40 30 20 10 0 - 30
Fig. 2 Diode Power Dissipation vs. Ambient Temperature
Diode power dissipation P ( mW ) 0 25 50 75 100 125
100
80 70 60
Forward current I
F
40
20
0 - 30
0
50 55
100
Ambient temperature T a ( C)
Ambient temperature T a ( C)
Fig. 3 Collector Power Dissipation vs. Ambient Temperature
200 Collector power dissipation P C ( mW )
Fig. 4 Total Power Dissipation vs. Ambient Temperature
300 Total power dissipation P tot ( mW )
250
150
200 170 150
100
100 50
50
0 - 30
0
25
50
75
100
125
0 - 30
0
25
50
100
Ambient temperature T a ( C)
Ambient temperature T a ( C)
Fig. 5 Peak Forward Current vs. Duty Ratio
10000 5000 ( mA ) 2000 1000 500 200 100 50 20 10 5 5 10
-3
Fig. 6 Forward Current vs. Forward Voltage
500 200 Forward current I F ( mA ) 100 50 20 10 5 2 1 T a = 75C 50C 25C 0C - 25C
Pulse width <=100 s T a = 25C
Peak forward current I
FM
2
5
10
-2
2
5
10
-1
2
5
1
0
0.5
1.0
1.5
2.0
F
2.5 ( V)
3.0
3.5
Duty ratio
Forward voltage V
PC354NT
Fig. 7 Current Transfer Ratio vs. Forward Current
500 V CE = 5V Current transfer ratio CTR ( % ) Collector current I C ( mA ) T a = 25C 400 40 I F = 30mA 30 20mA 10mA 20 5mA 100 10 1mA 0 0.1 1 10 100 Forward current I F ( mA ) 0 0 1 2 3 4 5 6 7 8 9 10 Collector-emitter voltage V CE ( V ) P C ( MAX. )
Fig. 8 Collector Current vs. Collectoremitter Voltage
50 Ta = 25C
300
200
Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature
150 Relative current transfer ratio ( % ) I F = 5mA V CE = 5V Collector-emitter saturation voltage V CE(sat) ( V )
Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 I F = 20mA I C = 1mA
100
50
0 - 30
0
20
40
60
a
80
100
0 - 30
0
20
40
60
80
100
Ambient temperature T
( C )
Ambient temperature T a ( C )
Fig.11 Collector Dark Current vs. Ambient Temperature
10
-5
Fig.12 Response Time vs. Load Resistance
500 V CE = 2V 200 I C = 2mA T = 25C 100 a 50 20 10 5 2 1 0.5 0.2 0.1 td ts tr tf
5 ( A) 10
-6
V CE = 20V Response time ( s ) 100
5 10
-7
Collector dark current I
CEO
5 10
-8
5 10
-9
5 10 10
- 10
5
- 11
- 30
0
20
40
60
80
0.01
0.1
1
10
50
Ambient temperature T a ( C)
Load resistance RL ( k )
PC354NT
Fig.13 Collector-emitter Saturation Voltage vs. Forward Current
5.6 T a = 25C 4.2 I C = 0.5mA 1mA 3mA 5mA 7mA
Test Circuit For Response Time
VCC Input Input RD RL Output Output 10% 90% td tr ts tf
Collector-emitter saturation voltage V CE(sat ) ( V)
2.8
1.4
0 0 1 2 3 4 5 6
F
7 ( mA )
8
9
10
Forward current I
s Temperature Profile of Soldering Reflow
30 seconds 230C
( 1 ) One time soldering reflow is recommended within the condition of temperature and time profile shown below. ( 2 ) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1).
200C
180C
1 minute 25C 2 minutes 1.5 minutes 1 minute
q Please refer to the chapter " Precautions for Use " .

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